IXYH50N120C3 igbt equivalent, 1200v xpt igbt.
z z z
G
C
E
Tab
G = Gate E = Emitter
C = Collector Tab = Collector
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Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) .
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Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE .
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